DocumentCode :
3467061
Title :
Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD
Author :
Zhao, Yongmei ; Sun, Guosheng ; Liu, Xingfang ; Li, Jiaye ; Zhao, Wanshun ; Wang, Lei ; Luo, Muchang ; Li, Jinmin
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
911
Lastpage :
913
Abstract :
The AlN thin films were deposited on Si(111) substrates by home-made low pressure metalorganic chemical vapor deposition (LP-MOCVD). At the growth temperature of 1100degC, the effects of the different V/III ratios on the surface morphology and structural characteristics of AlN films were systematically studied. The growth rate of about 150 nm/h was determined by the cross-sectional SEM. By the help of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, the obvious effects of the specific growth conditions (different V/III ratios) on the surface morphology and crystallinity of the deposited AlN films were investigated. At the V/III ratio of 15000, the preferred (0002) orientated AlN epitaxial film with the relatively smaller RMS roughness (1.422 nm) was obtained. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical composition and the chemical bonding structure of the AlN film, indicating some Si atoms outdiffusion from the Si substrate occurred
Keywords :
III-V semiconductors; MOCVD coatings; X-ray diffraction; X-ray photoelectron spectra; aluminium compounds; atomic force microscopy; elemental semiconductors; scanning electron microscopy; semiconductor thin films; silicon; surface morphology; wide band gap semiconductors; 1100 C; AlN thin films; AlN-Si; LP-MOCVD; V/III ratios; X-ray diffraction; X-ray photoelectron spectroscopy; atomic force microscopy; chemical bonding structure; chemical composition; crystallinity; epitaxial film; low pressure metalorganic chemical vapor deposition; scanning electron microscopy; structural characteristics; surface morphology; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Chemical analysis; Chemical vapor deposition; Force measurement; Scanning electron microscopy; Sputtering; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306569
Filename :
4098274
Link To Document :
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