Growth and Structural Properties of InAlGaN Quaternary Alloys on Sapphire Substrates by RF-MBE

Author

Wang, Bao-Zhu ; Wang, Xiao-Liang ; Wang, Xiao-Yan ; Wang, Xin-Hua ; Guo, Lun-Chun ; Xiao, Hong-Ling ; Wang, Jun-Xi ; Liu, Hong-Xin ; Zeng, Yi-Ping ; Li, Jin-Min ; Wang, Zhan-Guo

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

914

Lastpage

916

Abstract

InAlGaN quaternary alloys were grown on nitrided sapphire, AlN nuclear layer and GaN layer by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Reflection high-energy electron diffraction (RHEED), Rutherford back-scatter spectrometry (RBS), atomic-force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) were used to characterize the InAlGaN alloys. Different buffer layers strongly affect the growth mode, indium content and depth distribution, surface morphology and crystal quality of InAlGaN quaternary alloys. The experimental results show that the InAlGaN film grown on GaN layer can acquire layer-by-layer growth mode, uniform indium deep distribution, flat surface with RMS of InAlGaN to be 2.2nm and smallest full-width at half-maximum (FWHM) of InAlGaN (0002) peak to be 4.8 arcmin

Keywords

III-V semiconductors; Rutherford backscattering; X-ray diffraction; aluminium alloys; atomic force microscopy; gallium alloys; indium alloys; molecular beam epitaxial growth; reflection high energy electron diffraction; sapphire; semiconductor growth; substrates; surface morphology; wide band gap semiconductors; 2.2 nm; AFM; AlN; AlN nuclear layer; GaN layer; HRXRD; InAlGaN; InAlGaN film; InAlGaN quaternary alloys; RBS; RF-MBE; RHEED; Rutherford back-scatter spectrometry; atomic force microscopy; buffer layers; crystal quality; high resolution X-ray diffraction; layer-by-layer growth mode; nitrided sapphire; radio-frequency plasma-excited molecular beam epitaxy; reflection high-energy electron diffraction; sapphire substrates; surface morphology; uniform indium deep distribution; Gallium nitride; Indium; Molecular beam epitaxial growth; Optical reflection; Plasma properties; Plasma x-ray sources; Radio frequency; Substrates; Surface morphology; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306570

Filename

4098275