Title :
Investigation of Surface Charging Effects in AlGaN/GaN HEMT by a New Measurement Method
Author :
Luo, Qian ; Du, Jiangfeng ; Yang, Mohua ; Lu, Shenghui ; Zhou, Wei ; Xia, Jianxin ; Yu, Qi
Author_Institution :
Sch. of Microelectron. & Solid-state Electron., China Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
A new measurement method was confirmed that it was available to investigate the current collapse in AlGaN/GaN HEMT due to the surface trapping process of electrons. A characteristic time constant of the trapping process tp 0 was defined and obtained to be about 0.38s in a specially designed HEMT by this method. We observed an abnormal trapping time resulting from the transport of the trapped electrons and demonstrated that there was a dynamic equilibrious distribution of the charged surface states when the bias stress is applied longer than tp 0
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; semiconductor device measurement; surface charging; surface states; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; characteristic time constant; current collapse; dynamic equilibrious distribution; high electron mobility transistors; surface charging effects; surface states; surface trapping process; Aluminum gallium nitride; Current measurement; Electrical resistance measurement; Electron traps; Gallium nitride; HEMTs; Pulse measurements; Stress; Surface charging; Surface resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306595
