Title :
Reliability of soldered silicon devices on copper alloys
Author :
Achari, Achyuta ; Green, Wells
Author_Institution :
Automotive Components Div., Ford Motor Co., Dearborn, MI, USA
Abstract :
Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability
Keywords :
integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; power integrated circuits; soldering; IC/heat transfer joint area; Si; backside metallization; functional reliability; metallization scheme; package reliability; power ICs; reaction products; solder reactions; soldering; Copper; Copper alloys; Electronics packaging; Heat transfer; Hydrogen; Manufacturing; Metallization; Optical surface waves; Packaging; Power integrated circuits; Robustness; Silicon alloys; Silicon devices; Soldering; Surface cracks;
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1995. 'Manufacturing Technologies - Present and Future', Seventeenth IEEE/CPMT International
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2996-1
DOI :
10.1109/IEMT.1995.526107
