Reliability of soldered silicon devices on copper alloys

Author

Achari, Achyuta ; Green, Wells

Author_Institution

Automotive Components Div., Ford Motor Co., Dearborn, MI, USA

fYear

1995

fDate

2-4 Oct 1995

Firstpage

148

Lastpage

157

Abstract

Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability

Keywords

integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; power integrated circuits; soldering; IC/heat transfer joint area; Si; backside metallization; functional reliability; metallization scheme; package reliability; power ICs; reaction products; solder reactions; soldering; Copper; Copper alloys; Electronics packaging; Heat transfer; Hydrogen; Manufacturing; Metallization; Optical surface waves; Packaging; Power integrated circuits; Robustness; Silicon alloys; Silicon devices; Soldering; Surface cracks;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1995. 'Manufacturing Technologies - Present and Future', Seventeenth IEEE/CPMT International

Conference_Location

Austin, TX

Print_ISBN

0-7803-2996-1

Type

conf

DOI

10.1109/IEMT.1995.526107

Filename

526107