Characteristics of InGaN Channel HEMTs Grown by MOCVD

Author

Ran, Junxue ; Wang, Xiaoliang ; Hu, Guoxin ; Luo, Weijun ; Ma, Zhiyong ; Li, Jianping ; Wang, Cuimei ; Wang, Junxi ; Zeng, Yiping ; Li, Jinmin ; Liu, Xinyu ; Liu, Jian ; He, Zhijing

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

929

Lastpage

931

Abstract

The AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) structure was grown by metal organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. The electron transport properties were investigated by variable temperature Hall effect measurements. The fabricated devices with gate length of 0.8mum and gate width of 120 mum show a transconductance of 136mS/mm and maximum drain current of 435mA/mm. The small signal properties were also achieved with the current gain cut-off frequency (f_T) of 5.8GHz and the maximum frequency of oscillation (f_MAX) of 17GHz

Keywords

Hall effect; III-V semiconductors; MOCVD; aluminium compounds; electron transport theory; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; sapphire; semiconductor growth; wide band gap semiconductors; 0.8 micron; 120 micron; AlGaN; AlGaN/InGaN/GaN high electron-mobility transistors; GaN; Hall effect measurements; InGaN; InGaN channel HEMT; MOCVD; electron transport properties; metal organic chemical vapor deposition; sapphire substrates; signal properties; Aluminum gallium nitride; Chemical vapor deposition; Cutoff frequency; Electrons; Gallium nitride; HEMTs; MOCVD; MODFETs; Organic chemicals; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306597

Filename

4098280