Title :
Homoepitaxial Growth and Device Characteristics of SiC on Off-Oriented Si-Face (0001) 4H-SiC
Author :
Sun, Guo-Sheng ; Liu, Xing-Fang ; Ning, Jin ; Zhao, Yong-Mei ; Li, Jia-Ye ; Wang, Lei ; Zhao, Wan-Shun ; Luo, Mu-Chang ; Zeng, Yi-Ping ; Li, Jin-Min
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
Homoepitaxial growth of unintentional doped, nitrogen (N) doped n-type, and boron (B) doped p-type 4H-SiC epilayers on off-oriented n-type and semi-insulating Si-face (0001) substrates was performed in a horizontal hot-wall chemical vapor deposition (HW-CVD) reactor with SiH 4 and C2H4 at temperature of 1500 degC and pressure of 40 Torr. The electrical and structural properties, and intentional in-situ doping in 4H-SiC epilayers were investigated by using room temperature Hall effect measurement, Raman scattering measurement, and secondary ion mass spectroscopy (SIMS). PiN and MESFET structural materials were obtained by growing B-doped and undoped 4H-SiC epitaxial layers on n-type substrates and N-doped and undoped on semi-insulating substrates, respectively. The I-V characteristics of high power PiN rectifiers, UV PiN detectors and MESFETs were presented
Keywords :
Hall effect; Raman spectra; Schottky gate field effect transistors; boron; carbon compounds; chemical vapour deposition; elemental semiconductors; epitaxial growth; epitaxial layers; nitrogen; secondary ion mass spectroscopy; semiconductor doping; silicon; silicon compounds; wide band gap semiconductors; 1500 C; 40 torr; C2H4; HW-CVD reactor; Hall effect measurement; I-V characteristics; MESFET structural materials; PiN structural materials; Raman scattering measurement; SIMS; SiC:B; SiC:N; SiH4; UV PiN detectors; boron doped p-type 4H-SiC epilayers; electrical properties; high power PiN rectifiers; homoepitaxial growth; hot-wall chemical vapor deposition reactor; intentional in-situ doping; nitrogen doped n-type 4H-SiC epilayers; off-oriented n-type Si-face (0001) substrates; secondary ion mass spectroscopy; semiinsulating Si-face (0001) substrates; structural properties; Boron; Chemical vapor deposition; Doping; Electric variables measurement; Inductors; MESFETs; Nitrogen; Silicon carbide; Substrates; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306599
