Title :
High sensitive detections of Norovirus DNA and IgG by using multi-SiNW-FET biosensors
Author :
Xiaofeng Gong ; Rui Zhao ; Xiaomei Yu
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
This paper reports ultrasensitive detections of DNA and protein by multi-silicon-nanowire field-effect-transistor (SiNW-FET) biosensors. Single-SiNW-FET, double-SiNW-FET and quad-SiNW-FET have been designed on a single chip and fabricated by a simple top-down fabrication process. Compared with single-SiNW-FET, the multi-SiNW-FET biosensor shows a higher ability of decreasing the noise by averaging the source-drain currents. Both Norovirus DNA and IgG have been detected with the sensors at concentrations as low as 1 fM and 10 fM respectively. The sensor also shown high specificity in 1bp mismatch DNA disturbance.
Keywords :
DNA; biosensors; elemental semiconductors; field effect transistors; nanowires; proteins; silicon; IgG detection; Norovirus DNA detection; Si; multiSiNW-FET biosensors; multisilicon-nanowire field-effect-transistor; single-SiNW-FET; source-drain currents; Biosensors; DNA; Etching; Frequency modulation; Nanowires; Silicon; Biosensor; IgG; Multi-SiNW-FET; Norovirus DNA;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7181230