Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair

Author

Parker-Allotey, Nii-Adotei ; Alatise, Olayiwola ; Hamilton, Dean ; Jennings, Mike ; Mawby, Phil ; Nash, Rob ; Magill, Rob

Author_Institution

Int. Manuf. Centre, Univ. of Warwick, Coventry, UK

fYear

2011

fDate

5-7 Dec. 2011

Firstpage

1

Lastpage

6

Abstract

Two insulated-gate bipolar-transistors (IGBTs) inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested in an inductive switching circuit and curve tracer at a range of temperatures. Static and dynamic characteristics of both IGBTs and diodes have been used in loss comparisons between the two power modules. The results demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching and conduction losses.

Keywords

Schottky diodes; insulated gate bipolar transistors; invertors; p-i-n diodes; silicon; wide band gap semiconductors; IGBT inverter leg modules; IGBT/Si-PiN diode pair; IGBT/SiC-Schottky diode pair; SiC; anti-parallel diodes; conduction loss; electrothermal performance; identical power rating; inductive switching circuit; insulated gate bipolar-transistors; power modules; switching loss; Insulated gate bipolar transistors; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Switches; Conduction losses; Si PiN diode; SiC Schottky diode; power converter; silicon carbide; switching losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on

Conference_Location

Manchester

ISSN

2165-4816

Print_ISBN

978-1-4577-1422-1

Electronic_ISBN

2165-4816

Type

conf

DOI

10.1109/ISGTEurope.2011.6162688

Filename

6162688