Title :
Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair
Author :
Parker-Allotey, Nii-Adotei ; Alatise, Olayiwola ; Hamilton, Dean ; Jennings, Mike ; Mawby, Phil ; Nash, Rob ; Magill, Rob
Author_Institution :
Int. Manuf. Centre, Univ. of Warwick, Coventry, UK
Abstract :
Two insulated-gate bipolar-transistors (IGBTs) inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested in an inductive switching circuit and curve tracer at a range of temperatures. Static and dynamic characteristics of both IGBTs and diodes have been used in loss comparisons between the two power modules. The results demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching and conduction losses.
Keywords :
Schottky diodes; insulated gate bipolar transistors; invertors; p-i-n diodes; silicon; wide band gap semiconductors; IGBT inverter leg modules; IGBT/Si-PiN diode pair; IGBT/SiC-Schottky diode pair; SiC; anti-parallel diodes; conduction loss; electrothermal performance; identical power rating; inductive switching circuit; insulated gate bipolar-transistors; power modules; switching loss; Insulated gate bipolar transistors; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Switches; Conduction losses; Si PiN diode; SiC Schottky diode; power converter; silicon carbide; switching losses;
Conference_Titel :
Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on
Conference_Location :
Manchester
Print_ISBN :
978-1-4577-1422-1
Electronic_ISBN :
2165-4816
DOI :
10.1109/ISGTEurope.2011.6162688
