A New ZnO Film Photodetector Fabricated on Diamond Substrate

Author

Liu, Jian-Min ; Xia, Yi-Ben ; Wang, Lin-jun ; Zhao, Ping ; Su, Qing-Feng ; Shi, Wei-Min

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

950

Lastpage

952

Abstract

Highly c-axis oriented ZnO film was successfully deposited on the nucleation side of free-standing diamond film by RF reactive magnetron sputtering. I-V characteristics of ZnO film photodetector fabricated on diamond substrate were studied under ultraviolet light illumination and a significant photoresponsivity was observed. The dark-current and the photocurrent of the ZnO photodetector operated at 10V are 8.2 nA and 134.8 nA, respectively

Keywords

II-VI semiconductors; diamond; photoconductivity; photodetectors; sputter deposition; substrates; thin films; wide band gap semiconductors; zinc compounds; 10 V; 134.8 nA; 8.2 nA; I-V characteristics; RF reactive magnetron sputtering; ZnO; ZnO film photodetector; dark current; diamond substrate; free-standing diamond film; photocurrent; photoresponsivity; ultraviolet light illumination; Photodetectors; Raman scattering; Resistance heating; Scanning electron microscopy; Semiconductor films; Sputtering; Substrates; Temperature; Thermal conductivity; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306604

Filename

4098287