DocumentCode :
3467475
Title :
Investigation of Passivation Layer of CdZnTe Detector
Author :
Lu, Yue ; Sang, Wen-bin ; Xia, Jun ; Min, Jia-hua ; Qian, Yong-biao ; Teng, Jian-yong
Author_Institution :
Sch. of Material Sci. & Eng., Shanghai Univ.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
962
Lastpage :
964
Abstract :
The process of surface passivation of CdZnTe(CZT) plays dominant role in detector performance, which can decrease the noise of the detector and improve the spectral energy resolution. The thickness of the passivation film has been measured by infrared spectroscopic ellipsometry in this paper. The relationship between thickness of the passivation films and the passivation time was obtained. The results show that the thickness of three samples passivated for 5 min, 10 min, 15 min are 15.669 nm, 17.288 nm and 24.434 nm, respectively
Keywords :
ellipsometry; infrared spectra; passivation; semiconductor counters; 10 mins; 15 mins; 15.669 nm; 17.288 nm; 24.434 nm; 5 mins; CdZnTe; CdZnTe detector; detector performance; infrared spectroscopic ellipsometry; passivation film thickness; passivation layer; passivation time; spectral energy resolution; surface passivation; Chemical processes; Detectors; Ellipsometry; Extraterrestrial measurements; Infrared spectra; Leakage current; Optical films; Passivation; Spectroscopy; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306608
Filename :
4098291
Link To Document :
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