Title :
The Preparation of Large diameter Twin-free InP Crystals
Author :
Zhang, Weiyu ; Mao, Luhong ; Yang, Ruixia ; Kang, Xiaodong ; Zhou, Xiaolong ; Sun, Tongnian ; Sun, Niefeng
Author_Institution :
Coll. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ.
Abstract :
InP substrates have been indispensable to both optical and electronic devices. The cost reduction in the manufacturing process of these devices and the increase in size of IC chips have strongly required a larger diameter of these substrate wafers. Promoted by this requirement, InP single crystal technology has been rapidly developed. In the present paper, the development and key technology of large diameter twin-free InP crystal growth are discussed
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; substrates; twin boundaries; IC chip size; InP; InP single crystal technology; InP substrate; cost reduction; large diameter twin-free InP crystal growth; larger diameter substrate wafer; manufacturing process; Agricultural engineering; Circuit synthesis; Costs; Crystals; Indium phosphide; Optical devices; Optical microscopy; Substrates; Temperature distribution; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306610
