Title :
GaAs layers under external uniaxial stress: photoluminescence studies
Author :
Jian, Aoqun ; Wang, Jian ; Xue, Chenyang ; Zhang, Binzhen ; Wei, Tianjie
Author_Institution :
National Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan
Abstract :
In this paper, PL (photoluminescence) studies of MBE grown GaAs under external uniaxial stress parallel [110] direction are presented. Stress was applied by helix micrometer. Compressive or tensile in-plane strains were created and stress in the sample can be calculated by Hooke´s law. A blue shift was observed with increasing stress. After a series of pressure gaining, a new peak started at 1.432 eV around emerging on the shoulder of original luminescence peak, and the split became more apparent during the stress applying. The FWHM broadening of the PL peaks appeared during stress adding. The difference between hydrostatic and uniaxial stress is analyzed according to the experiment results in the paper
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; photoluminescence; spectral line shift; stress-strain relations; 1.432 eV; FWHM broadening; GaAs; Hooke´s law; MBE grown gallium arsenide; blue shift; compressive in-plane strain; external uniaxial stress; helix micrometer; hydrostatic stress; photoluminescence; pressure gaining; stress adding; tensile in-plane strain; Compressive stress; Electron emission; Excitons; Gallium arsenide; Laboratories; Luminescence; Photoluminescence; Radiative recombination; Spontaneous emission; Tensile stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306613
