GaAs layers under external uniaxial stress: photoluminescence studies

Author

Jian, Aoqun ; Wang, Jian ; Xue, Chenyang ; Zhang, Binzhen ; Wei, Tianjie

Author_Institution

National Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

977

Lastpage

979

Abstract

In this paper, PL (photoluminescence) studies of MBE grown GaAs under external uniaxial stress parallel [110] direction are presented. Stress was applied by helix micrometer. Compressive or tensile in-plane strains were created and stress in the sample can be calculated by Hooke´s law. A blue shift was observed with increasing stress. After a series of pressure gaining, a new peak started at 1.432 eV around emerging on the shoulder of original luminescence peak, and the split became more apparent during the stress applying. The FWHM broadening of the PL peaks appeared during stress adding. The difference between hydrostatic and uniaxial stress is analyzed according to the experiment results in the paper

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; photoluminescence; spectral line shift; stress-strain relations; 1.432 eV; FWHM broadening; GaAs; Hooke´s law; MBE grown gallium arsenide; blue shift; compressive in-plane strain; external uniaxial stress; helix micrometer; hydrostatic stress; photoluminescence; pressure gaining; stress adding; tensile in-plane strain; Compressive stress; Electron emission; Excitons; Gallium arsenide; Laboratories; Luminescence; Photoluminescence; Radiative recombination; Spontaneous emission; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306613

Filename

4098296