Title :
Very Broadband GaAs HBT RF MIC Power Amplifier
Author :
Wang, Yu-Chen ; Liu, Xun-Chun ; Chen, Jun ; Hao, Ming-Li ; Huang, Qing-Hua
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing
Abstract :
A very broadband GaAs HBT RF monolithic IC power amplifier with working band from DC to 3.5 GHz is developed successfully. An improved circuit structure of Darlington circuit is proposed. The gain of the PA is obviously increased and the temperature effect of the PA is effectively compensated by using this improved circuit. The gain is more than 18 dB. The output power is more than 22 dBm. The noise figure is less than 3.6 dB
Keywords :
III-V semiconductors; amplification; gallium arsenide; heterojunction bipolar transistors; monolithic integrated circuits; power amplifiers; radiofrequency integrated circuits; 0 to 3.5 GHz; Darlington circuit; GaAs; GaAs HBT RF MIC power amplifier; RF monolithic IC power amplifier; gain; noise figure; output power; temperature effect; very broadband GaAs HBT power amplifier; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306614
