Very Broadband GaAs HBT RF MIC Power Amplifier

Author

Wang, Yu-Chen ; Liu, Xun-Chun ; Chen, Jun ; Hao, Ming-Li ; Huang, Qing-Hua

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

980

Lastpage

982

Abstract

A very broadband GaAs HBT RF monolithic IC power amplifier with working band from DC to 3.5 GHz is developed successfully. An improved circuit structure of Darlington circuit is proposed. The gain of the PA is obviously increased and the temperature effect of the PA is effectively compensated by using this improved circuit. The gain is more than 18 dB. The output power is more than 22 dBm. The noise figure is less than 3.6 dB

Keywords

III-V semiconductors; amplification; gallium arsenide; heterojunction bipolar transistors; monolithic integrated circuits; power amplifiers; radiofrequency integrated circuits; 0 to 3.5 GHz; Darlington circuit; GaAs; GaAs HBT RF MIC power amplifier; RF monolithic IC power amplifier; gain; noise figure; output power; temperature effect; very broadband GaAs HBT power amplifier; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306614

Filename

4098297