Design and Performance of a Preamplifier for HgCdTe IR Detectors

In this paper, A high-performance low-power low-noise preamplifier working at lower temperature (about 90K) for HgCdTe IR detectors is designed by using a single-ended folded-cascode structure and by using an MOS transistor operating in the linear region as feedback resistor. Its noise characteristics were analyzed and the methods for decreasing noise were put forward. This preamplifier was fabricated in 1.2 y- m CMOS technology. The size of four cell chip is 2.1mm times 2.9mm. The test result shows that the preamplifier can work at the temperature of 90K. The equivalent input noise current is 0.03pA/Hz^frac12@100Hz and the power consumption is less than 1mW . This preamplifier works well when it be used in conjunction with HgCdTe IR detectors, and the performance has good linearity