A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35 μm SiGe BiCMOS Technology

Author

Wang, A. ; Xiaokang Guan ; Haigang Feng ; Qu Wu ; Rouying Zhan ; Li-Wu Yang

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL

Volume

1

fYear

2005

fDate

24-27 Oct. 2005

Firstpage

360

Lastpage

363

Abstract

This paper presents a 2.4 GHz fully integrated class-A power amplifier designed and implemented in a commercial 0.35 mum SiGe BiCMOS technology for a single-chip dual-band transceiver. It delivers a power output of 18.5dBm at an input power of -8dBm with a PAE of 17%. The 2nd and 3rd harmonics are -37.5dBc and -32.2dBc, respectively. The power amplifier draws a DC current of 126mA from a 3.3 V supply and achieves a linear gain of 27.6 dB. The fabricated die size is only 1.2 mm times 1 mm. An improved PA model is introduced for optimal power matching analysis that was verified in this design

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; integrated circuit design; transceivers; 0.35 micron; 1 mm; 1.2 mm; 126 mA; 2.4 GHz; 27.6 dB; 3.3 V; BiCMOS technology; SiGe; class-A power amplifier; optimal power matching analysis; single-chip dual-band transceiver; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Conference_Location

Shanghai

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611325

Filename

1611325