Title :
Interfacial depletion layers evidenced from dielectric relaxation current in ferroelectric thin films
Author :
Jiang, A.Q. ; Lin, Y.Y. ; Tang, T.A.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai
Abstract :
The relaxation current decays with time t to follow the Curie-von Schweidler law of Jr(t) = J0fn with the exponent n slightly less than the unity either under or after dc-voltage stressing of Pb(Zr,Ti)O3 thin films, in agreement with direct measurements of capacitance dispersion evaluated from frequency spectrum. J0 versus voltage shows a typical behavior of p-n junction at t = 0.28 s but overlapping of twin p-n junctions at t < 10 ms. This predicts voltage modification of two interfacial depletion layers formed by polarization terminations near interfaces between the film and electrodes
Keywords :
dielectric relaxation; ferroelectric thin films; lead compounds; titanium compounds; zirconium compounds; 0.28 s; Curie-von Schweidler law; Pb(Zr,Ti)O3 thin films; Pb(ZrTi)O3; capacitance dispersion; dc-voltage stressing; dielectric relaxation current; ferroelectric thin films; frequency spectrum; interfacial depletion layers; p-n junction; polarization terminations; Capacitance measurement; Current measurement; Dielectric thin films; Ferroelectric materials; Frequency measurement; P-n junctions; Stress measurement; Time measurement; Transistors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306644
