DocumentCode :
3467789
Title :
Fabrication of IR Reflectors by Porous Silicon Technique
Author :
Wang, Zhejin ; Wang, Lianwei ; Zheng, Yuxiang ; Xiaoshuang Chen
Author_Institution :
Dept. of Electron., East China Normal Univ., Shanghai
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
1010
Lastpage :
1012
Abstract :
Omnidirectional mirrors worked in mid-infrared made by periodically repeating two different refractive index layers of fully and partially oxidized porous silicon have been reported. A reflector structural with good thermal isolation properties is proposed in this report. Oxidation properties of porous silicon multilayer structure have been investigated and the oxidization behavior as well as its microstructure has been investigated
Keywords :
mirrors; porous semiconductors; refractive index; silicon; IR reflectors; Si; omnidirectional mirrors; oxidation properties; oxidization behavior; porous silicon multilayer structure; reflector structural; refractive index layers; thermal isolation properties; Current density; Etching; Mirrors; Nonhomogeneous media; Optical device fabrication; Optical refraction; Optical variables control; Oxidation; Refractive index; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306645
Filename :
4098306
Link To Document :
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