In-Plane and Perpendicular Hall Magnetoresistance Ratio in MgO/FeCo/Pt/GdFeCo

Author

Li, Simon C. ; Weng, M.C. ; Chen, T.-J. ; Wu, Te-Ho

Author_Institution

Graduate Inst. of Commun. Enigneering, National Univ. of Tainan

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1028

Lastpage

1030

Abstract

AGM hysteresis and Hall magnetoresistance ratio (HMR) with in-plane (IP) fields and perpendicular (P) fields of multilayered films of amorphous RE-TM layers separated by a Pt inter-layer, are measured and compared. Hall voltage variation with P-field is twice larger than IP-field. It indicates more charges were deflected by the P-field than IP-field. Discrepancy of P-HMR and IP-HMR in forward (-B to +B) and reverse trace (+B to -B) are consistent with AGM hysteresis. Measured P-HMR and IP-HMR are almost 10 times over conventional MR

Keywords

Hall effect; iron compounds; magnesium compounds; magnetic thin films; magnetoresistance; multilayers; platinum; AGM hysteresis; Hall magnetoresistance ratio; Hall voltage variation; MgO-FeCo-Pt-GdFeCo; MgO-FeCo-Pt-GdFeCo/int; amorphous RE-TM layers; in-plane fields; multilayered films; perpendicular fields; Amorphous magnetic materials; Electrical resistance measurement; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetic separation; Magnetoresistance; Pollution measurement; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306651

Filename

4098312