Title :
Nanocrystalline Silicon Quantum Dot Devices
Author :
Oda, S. ; Huang, S.Y. ; Salem, M.A. ; Hippo, D. ; Tanaka, A. ; Tsuchiya, Y. ; Mizuta, H.
Author_Institution :
Quantum Nanoelectronics Res. Center & Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
Electron transport and photonic properties of silicon nanocrystals prepared by plasma decomposition of silane are described with particular emphasis on silicon nanocrystals memory, microscopic charge measurement by KFM, NEMS devices, and silicon photonic devices
Keywords :
charge measurement; decomposition; nanoelectronics; nanostructured materials; random-access storage; silicon; KFM; NEMS devices; Si; electron transport properties; microscopic charge measurement; nanocrystalline silicon quantum dot devices; photonic properties; plasma decomposition; silane; silicon nanocrystals memory; silicon photonic devices; Charge measurement; Electron microscopy; Nanocrystals; Nanoscale devices; Plasma devices; Plasma measurements; Plasma properties; Plasma transport processes; Quantum dots; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306657
