Title :
Total ionizing dose effects in a SRAM-based FPGA
Author :
MacQueen, D.M. ; Gingrich, D.M. ; Buchanan, N.J. ; Green, P.W.
Author_Institution :
Dept. of Phys., Alberta Univ., Edmonton, Alta., Canada
Abstract :
We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased
Keywords :
SRAM chips; field programmable gate arrays; radiation hardening (electronics); 16 krad; 39 krad; SRAM-based FPGA; XL-series; XLA-series; Xilinx XC4036X FPGAs; dose rate; field programmable gate arrays; power supply current; total dose; total ionizing dose effects; Aluminum; Apertures; Circuit testing; Computer errors; Computerized monitoring; Dosimetry; Field programmable gate arrays; Lead; Ovens; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1999
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-5660-8
DOI :
10.1109/REDW.1999.816052
