Title :
Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits
Author :
Tsutsui, Kazuo ; Watanabe, So ; Maeda, Motoki ; Sugisaki, Tsuyoshi ; Toriumi, Yohei
Author_Institution :
Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Yokohama
Abstract :
Resonant tunneling diodes (RTDs) composed of heteroepitaxial fluorides on Si substrates have been investigated as a candidate of Si-based highly functional quantum device. Problems for growth of good heterostructure were overcame by various techniques such as post oxidation, introduction of fluoride alloy system, improved heterostructures and V-grooved structures. These techniques improved electrical properties and stability of the fluoride RTDs significantly, and made such devices realistic candidates for co-integration in the Si-based integrated circuits
Keywords :
electric properties; elemental semiconductors; monolithic integrated circuits; resonant tunnelling diodes; silicon; substrates; RTD; Si substrates; Si-based highly functional quantum device; Si-based integrated circuits; V-grooved structures; electrical properties; fluoride alloy system; fluoride heterostructures; heteroepitaxial fluorides; resonant tunneling diodes; Application specific integrated circuits; CMOS logic circuits; Chemicals; FETs; Logic devices; Oxidation; Resonant tunneling devices; Semiconductor diodes; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306660
