DocumentCode :
3468093
Title :
Single-electron device using Si nanodot array and multi-input gates
Author :
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo
Author_Institution :
Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
1062
Lastpage :
1064
Abstract :
We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions
Keywords :
logic gates; nanoelectronics; silicon; single electron devices; Si; Si nanodot array device; logic gate; multiinput gates; oscillatory characteristics; single-electron device; Capacitance; Circuit simulation; Circuit testing; Equivalent circuits; Fluctuations; Information science; Logic functions; Nanoscale devices; Single electron devices; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306681
Filename :
4098322
Link To Document :
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