Nano-scale MOSFET: Comments on different ballistic models and device simulation

A detailed view of carrier transport models in Nanometer MOS Transistors is presented and discussed. Two and three dimension (2D and 3D) based on Poisson - Schrodinger and Boltzmann transport simulation with Green´s function approach to optimize the models for best suited analysis is successfully analyzed. Different analytical models is presented and compared for simplicity, accuracy and suitability for nanometer MOSFET devices. Comments for IC technology challenges are presented to show the continuity of models from triode to saturation, below and above threshold to sub threshold. The models describe the device from diffusion to ballistic through quasi- ballistic region. A numerical simulation of I-V characteristics based on the above is successfully obtained to optimize the analysis. This work serves as deep insight study of device behavior, that may prove useful as MOSFET´s are scaled to their limits and as new devices are explored. This paper gives a new way of understand, modeling and design of transistor performance.