• DocumentCode
    3468175
  • Title

    A Solid State Neuron for the Realisation of Highly Scaleable Third Generation Neural Networks

  • Author

    Chen, Yajie ; Hall, Steve ; McDaid, Liam ; Buiu, Octavian ; Kelly, Peter

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Liverpool Univ.
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1071
  • Lastpage
    1073
  • Abstract
    The paper describes a novel silicon synapse based on a two stage charge-coupled device with the weighting functionality integrated into the first stage by means of a floating gate. A spike input to the second gate allows the charge under the first gate to drift onto the floating diffusion output stage to produce a voltage spike. Parallel defined synapses are assigned to the drain of the input MOSFET of the current mirror which serves as the point neuron. This configuration provides a summing function and allows the transfer of the spikes. The neuron and its associated solid state synapses comprise a highly compact and scaleable neural cell which operates at very low power levels because of its charge coupled operation
  • Keywords
    MOSFET circuits; charge-coupled device circuits; neural nets; current mirror; floating diffusion output; floating gate; input MOSFET; parallel synapses; scaleable neural cell; scaleable third generation neural networks; silicon synapse; solid state neuron; summing function; two stage charge-coupled device; weighting functionality; Biology computing; Capacitors; Character generation; Charge coupled devices; Computer networks; Neural networks; Neurons; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306684
  • Filename
    4098325