DocumentCode :
3468224
Title :
Development of integrated process control system utilizing neural network for plasma etching
Author :
Koh, Taek-Beom ; Cha, Sang-Yeob ; Woo, KwangBang ; Moon, Dae-Sik ; Kwak, KyuHwan ; Chang, HoSeung
Author_Institution :
Dept. of Electr. Eng., Yonsei Univ., Seoul, South Korea
fYear :
1995
fDate :
2-4 Oct 1995
Firstpage :
218
Lastpage :
223
Abstract :
The purpose of this study is to provide the integrated process control system utilizing neural network modeling, to search for the appropriate choice of control input, and to keep the process output within the desired range in the real etch process. Variations in the process output are classified as the drift and the shift. The drift is caused by a natural noise that changes over a period of time slowly and steadily partly due to the aging of equipment. Although the drift moves the process output away from the target value, its variation is infinitesimal. On the other hand, the shift results in a larger variation due to the various causes and its width is normally greater than that of the drift. Without appropriate procedures, the process output will move away from the target value greatly. Therefore the control strategy is to minimize the process shifts, in which process outputs are measured by monitoring wafers periodically
Keywords :
neural nets; process control; semiconductor process modelling; sputter etching; aging; drift; integrated process control; neural network model; noise; plasma etching; shift; Aging; Etching; Genetic algorithms; Monitoring; Neural networks; Optimal control; Plasma applications; Plasma devices; Plasma materials processing; Process control; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1995. 'Manufacturing Technologies - Present and Future', Seventeenth IEEE/CPMT International
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2996-1
Type :
conf
DOI :
10.1109/IEMT.1995.526118
Filename :
526118
Link To Document :
بازگشت