DocumentCode
3468255
Title
High energy electron testing of silicon and GaAs/Ge solar cells
Author
Miller, Kyle B. ; O´Quinn, Clyde
Author_Institution
Ball Aerosp. Syst. Group, Boulder, CO, USA
fYear
1999
fDate
1999
Firstpage
108
Lastpage
112
Abstract
Silicon and GaAs/Ge solar cells were tested with 20 MeV, 40 MeV, and 60 MeV electrons to determine the displacement damage effects. Silicon cell degradation is linear with Non-Ionizing Energy Loss (NIEL) as reported in the literature. GaAs/Ge degradation was found to scale linearly with NIEL for the maximum power and as the square root of the NIEL for the open circuit voltage (Voc). The short circuit current degradation was found to be independent of electron energy
Keywords
III-V semiconductors; electron beam effects; elemental semiconductors; energy loss of particles; gallium arsenide; germanium; semiconductor device testing; silicon; solar cells; 20 MeV; 40 MeV; 60 MeV; GaAs-Ge; GaAs/Ge solar cell; Si; displacement damage; high energy electron testing; nonionizing energy loss; open circuit voltage; short circuit current; silicon solar cell; Aerospace testing; Circuits; Degradation; Electron traps; Gallium arsenide; Photovoltaic cells; Probes; Protons; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1999
Conference_Location
Norfolk, VA
Print_ISBN
0-7803-5660-8
Type
conf
DOI
10.1109/REDW.1999.816064
Filename
816064
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