Title :
High energy electron testing of silicon and GaAs/Ge solar cells
Author :
Miller, Kyle B. ; O´Quinn, Clyde
Author_Institution :
Ball Aerosp. Syst. Group, Boulder, CO, USA
Abstract :
Silicon and GaAs/Ge solar cells were tested with 20 MeV, 40 MeV, and 60 MeV electrons to determine the displacement damage effects. Silicon cell degradation is linear with Non-Ionizing Energy Loss (NIEL) as reported in the literature. GaAs/Ge degradation was found to scale linearly with NIEL for the maximum power and as the square root of the NIEL for the open circuit voltage (Voc). The short circuit current degradation was found to be independent of electron energy
Keywords :
III-V semiconductors; electron beam effects; elemental semiconductors; energy loss of particles; gallium arsenide; germanium; semiconductor device testing; silicon; solar cells; 20 MeV; 40 MeV; 60 MeV; GaAs-Ge; GaAs/Ge solar cell; Si; displacement damage; high energy electron testing; nonionizing energy loss; open circuit voltage; short circuit current; silicon solar cell; Aerospace testing; Circuits; Degradation; Electron traps; Gallium arsenide; Photovoltaic cells; Probes; Protons; Silicon; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1999
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-5660-8
DOI :
10.1109/REDW.1999.816064
