The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Author

Saidoh, M. ; Fukuda, M. ; Arakawa, K. ; Tajima, S. ; Sunaga, H. ; Yotsumoto, K. ; Kamiya, T. ; Tanaka, R. ; Hirao, T. ; Nashiyama, I. ; Ohshima, T. ; Itoh, H. ; Okada, S. ; Nemoto, N. ; Kuboyama, S. ; Matsuda, S.

Author_Institution

JAERI, Ibaraki, Japan

fYear

1999

fDate

1999

Firstpage

117

Lastpage

122

Abstract

Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan are described, which cover different radiation qualities, such as gamma-rays, electron beams and ion beams. Among them a stress is put on the facilities for the single-event phenomena (SEP) testing using ion beams with wide LET ranges as well as for the microscopic analysis of SEP using a microbeam of 1 μm diameter

Keywords

electron beam effects; gamma-ray effects; ion beam effects; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; 1 mum; Japan; electron beams; gamma-rays; ion beams; irradiation facilities; microbeam; microscopic analysis; radiation tolerance testing; semiconductor device; single-event phenomena; space electronics; wide LET ranges; Atomic measurements; Costs; Electron beams; Electronic equipment testing; Ion beams; Semiconductor device reliability; Semiconductor device testing; Semiconductor devices; Space vehicles; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1999

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-5660-8

Type

conf

DOI

10.1109/REDW.1999.816066

Filename

816066