Reliability Issues in Multi-Gate FinFETs

Author

Choi, Yang-Kyu ; Han, Jin-Woo ; Lee, Hyunjin

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1101

Lastpage

1104

Abstract

Reliability characteristics are investigated in CMOS multi-gate FinFETs. Hot-carrier injection (HCI) is crucial in NMOS and negative bias temperature instability (NBTI) is important in PMOS. Series resistance plays a key role in governing the device degradation in NMOS by HCI. The static and dynamic NBTI characteristics on both SOI and body-tied PMOS FinFETs were studied, and the device degradation due to NBTI is more significant in a narrow fin device and a SOI FinFET

Keywords

CMOS integrated circuits; MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; thermal stability; CMOS multigate FinFET; NMOS; PMOS FinFET; SOI FinFET; dynamic NBTI characteristics; hot-carrier injection; negative bias temperature instability; semiconductor device reliability; static NBTI characteristics; Current measurement; Degradation; Differential equations; FinFETs; Hot carrier effects; Human computer interaction; Immune system; Niobium compounds; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306694

Filename

4098335