On the Reliability Issues of RF CMOS Devices

Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects