Title :
Comparison of novel BTI measurements for high-k dielectric MOSFETs
Author :
Choi, Rino ; Heh, Dawei ; Kang, Chang Yong ; Young, Chadwin ; Bersuker, Gennadi ; Lee, Byoung Hun
Author_Institution :
SEMATECH, Austin, TX
Abstract :
Threshold voltage (VT) instability behavior in high-k devices was investigated using conventional DC, pulse, and "on-the-fly" bias temperature instability (BTI) measurements. By comparing the results, the effect of fast transient charging and relaxation on BTI has been evaluated
Keywords :
MOSFET; dielectric relaxation; high-k dielectric thin films; stability; transients; bias temperature instability measurements; high-k dielectric MOSFET; threshold voltage instability behavior; transient charging; transient relaxation; Current measurement; Dielectric measurements; FETs; High-K gate dielectrics; MOSFETs; Pulse measurements; Stress measurement; Temperature measurement; Tin; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306698
