Title :
Models of Source/Drain Bias on Negative Bias Temperature Instability
Author :
Gan, Z.H. ; Liao, C.C. ; Liao, M. ; Wang, J.P. ; Wong, W. ; Yan, B.G. ; Kang, J.F. ; Won, Y.Y.
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai
Abstract :
This paper discusses the influence of source/drain (S/D) bias on negative bias temperature instability (NBTI) in pMOS devices. It is found that with the S/D bias increase, the NBTI degradation is initially reduced, but it increases with higher S/D bias. Two models are presented to explain the underlying mechanisms. One is the graded hydrogen density model, which dominates at the low S/D bias; and the other is the energetic hole model, which successfully explains the high threshold voltage (Vth) shift at high S/D bias
Keywords :
MOSFET; hole traps; semiconductor device models; stability; NBTI degradation; energetic hole model; negative bias temperature instability; pMOS devices; source/drain bias model; CMOS technology; Degradation; Hydrogen; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Plasma temperature; Thermal stresses; Threshold voltage; Titanium compounds;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306699
