DocumentCode :
3468495
Title :
CMOS 1.5V bandgap voltage reference
Author :
Jingwen, Mao ; Tingqian, Chen ; Cheng, Chen ; Junyan, Ren ; Li, Yang
Author_Institution :
ASIC & Syst. Skate Key Lab., Fudan Univ., Shanghai
Volume :
1
fYear :
2005
fDate :
24-0 Oct. 2005
Firstpage :
469
Lastpage :
472
Abstract :
A low power and high precision CMOS bandgap voltage reference circuit is presented. Prototype of the circuit is fabricated using the 0.18 mum CMOS process. The power supply is only 1.5 V. It fulfills the first order PTAT (proportion to absolute temperature) temperature curvature compensation with a good PSRR (power supply rejection ratio). The measured results of this circuit show that the PSRR is 47 dB. The output voltage varies from 1.114 V to 1.117 V which is constant within 0.269% over the temperature range of 0~80 degC. The power dissipation is 0.22 mW at 1.5 V and the active area is 0.057 mm2
Keywords :
CMOS integrated circuits; energy gap; integrated circuit design; low-power electronics; reference circuits; 0.18 micron; 0.22 mW; 1.114 to 1.117 V; 1.5 V; CMOS bandgap voltage reference; power supply rejection ratio; temperature curvature compensation; Application specific integrated circuits; CMOS process; CMOS technology; Circuit stability; Current density; Low voltage; Photonic band gap; Power supplies; Resistors; Temperature; Bandgap voltage reference; low supply;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location :
Shanghai
Print_ISBN :
0-7803-9210-8
Type :
conf
DOI :
10.1109/ICASIC.2005.1611359
Filename :
1611359
Link To Document :
بازگشت