Hot Carrier Induced Leakage Current Instability in Metal Induced Laterally Crystallized n-type Poly-Silicon Thin Film Transistors

Author

Zhu, Zhen ; Wang, Mingxiang ; Zhang, Dongli ; Wong, Man

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1129

Lastpage

1131

Abstract

Field enhanced leakage current characteristics of metal induced laterally crystallized polycrystalline silicon thin film transistors (poly-Si TFTs) under hot carrier (HC) stress are investigated, in both forward and reverse measurement mode, with varied stress gate/drain voltages and stress times. Degradation behaviors can be understood by the effect of HC stress on drain electrical field and on bulk poly-Si channel resistance

Keywords

elemental semiconductors; hot carriers; leakage currents; metals; silicon; stability; stress effects; thin film transistors; Si; bulk poly-Si channel resistance; degradation behavior; drain electrical field; field enhanced leakage current characteristics; forward measurement mode; hot carrier induced leakage current instability; hot carrier stress; metal induced laterally crystallized n-type poly-silicon thin film transistors; poly-Si TFT; reverse measurement mode; stress gate/drain voltages; Crystallization; Current measurement; Degradation; Electrical resistance measurement; Hot carriers; Leakage current; Silicon; Stress measurement; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306702

Filename

4098343