Title :
Radiation Hardened Performance of CMOS Devices Fabricated by Using Modified Thin SOS Film
Author :
Zhongli, Liu ; Ning, Li ; Jiantou, Gao ; Fang, Yu
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
0.2 mum thin SOS film was modified by solid phase epitaxy using Si implantation. PMOS and NMOS devices and 54HC04 circuits were fabricated by the film. The DC characteristics of CMOS devices were measured. The transient irradiation and total dose irradiation test were put up. It was shown that fabricated integrated circuits have not only quite good electrical characteristics but also excellent transient hardened performance and total dose radiation hardened ability
Keywords :
CMOS integrated circuits; MOSFET; aluminium compounds; elemental semiconductors; ion implantation; radiation hardening (electronics); sapphire; semiconductor thin films; silicon; silicon-on-insulator; solid phase epitaxial growth; 0.2 micron; 54HC04 circuits; CMOS devices; DC characteristics; NMOS devices; PMOS devices; Si implantation; Si-Al2O3; electrical characteristics; modified thin SOS film; radiation hardened performance; solid phase epitaxy; total dose irradiation test; transient irradiation; CMOS technology; Circuit testing; Electric variables; Epitaxial growth; Leakage current; MOSFET circuits; Radiation hardening; Semiconductor films; Solids; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306053
