DocumentCode :
3468598
Title :
Accurate estimation of vector dependent leakage power in the presence of process variations
Author :
Fernandes, Romana ; Vemuri, Ranga
Author_Institution :
Univ. of Cincinnati, Cincinnati, OH, USA
fYear :
2009
fDate :
4-7 Oct. 2009
Firstpage :
451
Lastpage :
458
Abstract :
With the increasing importance of run-time leakage power dissipation (around 55% of total power), it has become necessary to accurately estimate it not only as a function of input vectors but also as a function of process parameters. Leakage power corresponding to the maximum vector presents itself as a higher bound for run-time leakage and is a measure of reliability. In this work, we address the problem of accurately estimating the probabilistic distribution of the maximum runtime leakage power in the presence of variations in process parameters such as threshold voltage, critical dimensions and doping concentration. Both sub-threshold and gate leakage current are considered. A heuristic approach is proposed to determine the vector that causes the maximum leakage power under the influence of random process variations. This vector is then used to estimate the lognormal distribution of the total leakage current of the circuit by summing up the lognormal leakage current distributions of the individual standard cells at their respective input levels. The proposed method has been effective in accurately estimating the leakage mean, standard deviation and probability density function (PDF) of ISCAS-85 benchmark circuits. The average errors of our method compared with near exhaustive random vector testing for mean and standard deviation are 1.32% and 1.41% respectively.
Keywords :
circuit layout; current distribution; leakage currents; random processes; statistical distributions; ISCAS-85 benchmark circuits; gate leakage current; heuristic approach; layout level analysis; lognormal distribution estimation; lognormal leakage current distributions; probabilistic distribution estimation; probability density function; random process variations; random vector testing; run-time leakage power dissipation; standard deviation; subthreshold current; vector dependent leakage power estimation; Benchmark testing; Circuits; Doping; Leakage current; Power dissipation; Power measurement; Probability density function; Random processes; Runtime; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2009. ICCD 2009. IEEE International Conference on
Conference_Location :
Lake Tahoe, CA
ISSN :
1063-6404
Print_ISBN :
978-1-4244-5029-9
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2009.5413116
Filename :
5413116
Link To Document :
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