Investigation of Gate-Induced Drain Leakage Current in Ultra-thin Gate Oxide LDD nMOSFET´s

The gate-induced drain leakage current (GIDL) current is investigated in LDD nMOSFET´s. It is shown that under constant drain-to-gate voltage (V_DG) the difference between I_D in the off-state I_D-V_G characteristics and the corresponding one in the off-state I_D-V_D characteristics, which is defined as D_IFF, versus V_DG shows a peak. Moreover, the natural logarithm of the maximum D _IFF (D_IFF, _MAX) varies linearly with V _DG. The D_IFF, _MAX-V_DG curves of different thickness gate oxide(4nm and 1.4nm) are presented. Moreover, it is found that D_IFF curve shifts upwards with increasing temperature