DocumentCode :
3468820
Title :
Application of Proportional Difference Operator Method on Endurance Characteristics study of Flash Memory
Author :
Xie, Bing ; He, Yandong ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
1177
Lastpage :
1179
Abstract :
The paper describes the application of proportional difference operator (PDO) method as presented by Changhua Tan, et al. (1998) in research on endurance characteristics of flash memory. This method makes it rapid to extract activation energy
Keywords :
flash memories; integrated memory circuits; mathematical operators; activation energy extraction; endurance characteristics; flash memory; proportional difference operator method; Capacitance; Channel hot electron injection; Degradation; Electron traps; Flash memory; Flash memory cells; Logic programming; Nonvolatile memory; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306068
Filename :
4098359
Link To Document :
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