DocumentCode
3468820
Title
Application of Proportional Difference Operator Method on Endurance Characteristics study of Flash Memory
Author
Xie, Bing ; He, Yandong ; Xu, Mingzhen ; Tan, Changhua
Author_Institution
Dept. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1177
Lastpage
1179
Abstract
The paper describes the application of proportional difference operator (PDO) method as presented by Changhua Tan, et al. (1998) in research on endurance characteristics of flash memory. This method makes it rapid to extract activation energy
Keywords
flash memories; integrated memory circuits; mathematical operators; activation energy extraction; endurance characteristics; flash memory; proportional difference operator method; Capacitance; Channel hot electron injection; Degradation; Electron traps; Flash memory; Flash memory cells; Logic programming; Nonvolatile memory; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306068
Filename
4098359
Link To Document