DocumentCode
3468849
Title
Leakage Power Modeling Method for SRAM Considering Temperature, Supply Voltage and Bias Voltage
Author
Zhang, Feng ; Luo, Rong ; Liu, Yongpan ; Wang, Hui ; Yang, Huazhong
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1180
Lastpage
1182
Abstract
In this paper, an accurate power estimation method for SRAM memories based on structures is proposed. Furthermore, based on this power estimation method, a leakage power model for SRAM considering temperature, supply voltage and bias voltage is also proposed. Its maximum error is within 7%
Keywords
SRAM chips; leakage currents; power supply circuits; SRAM memories; bias voltage; leakage power modeling; power estimation; supply voltage; temperature; Circuits; Computer errors; Energy consumption; Power engineering and energy; Power system modeling; Random access memory; Temperature dependence; Temperature sensors; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306069
Filename
4098360
Link To Document