Title :
Leakage Power Modeling Method for SRAM Considering Temperature, Supply Voltage and Bias Voltage
Author :
Zhang, Feng ; Luo, Rong ; Liu, Yongpan ; Wang, Hui ; Yang, Huazhong
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing
Abstract :
In this paper, an accurate power estimation method for SRAM memories based on structures is proposed. Furthermore, based on this power estimation method, a leakage power model for SRAM considering temperature, supply voltage and bias voltage is also proposed. Its maximum error is within 7%
Keywords :
SRAM chips; leakage currents; power supply circuits; SRAM memories; bias voltage; leakage power modeling; power estimation; supply voltage; temperature; Circuits; Computer errors; Energy consumption; Power engineering and energy; Power system modeling; Random access memory; Temperature dependence; Temperature sensors; Voltage; Writing;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306069
