Yield Modeling of Arbitrary Defect Outline

In integrated circuits(IC), the defects associated with photolithography are assumed to be the shape of circular discs in order to perform the estimation of yield and fault analysis. However, real defects exhibit a great variety of shapes. Based on the real outlines of the defects and the mathematical morphology, a novel yield model is presented and the critical area model is provided correspondingly. Since they avoid changing the defects into the shape of circular discs, the models predict the yield caused by the defects more accurately than the circular discs model does. Experimental results showing the model´s performance are presented. It is significant that the yield is accurately estimated using the proposed model