Generation-recombination-trapping at interface traps in short-channel MOS transistors

When the MOS transistor channel shortens, terminal currents from thermal generation-recombination-trapping (GRT) of electrons and holes at SiO₂/Si interface traps in the drain and source p/n junction space-charge regions and their extension regions are increasingly dominant over the shortened base-channel region. Analytic solutions of GRT currents from interface traps in the two-dimensional drain and source p/n junction space-charge regions are obtained for the very thin and very thick gate-oxide limits. As anticipated from device physics, experimental results from increasingly shorter channels (100 mum to 0.13 mum) nMOS and pMOS transistors favor the very thin oxide model for the short channel transistors