Title :
Circuit Enablement for SiGe BiCMOS and RFCMOS Technologies
Author :
Wang, X. ; Chen, Y. ; Sweeney, S. ; Lee, J. ; Anna, R. ; Pekarik, J. ; Sanderson, D. ; Wang, D.
Author_Institution :
IBM Semicond. R&D Center, Essex Junction, VT
Abstract :
This paper reviews the circuit enablement activity conducted inside IBM´s SiGe BiCMOS and RFCMOS technology enablement group. Examples of circuit designs are given. Model/hardware correlations on DC, AC, noise and nonlinearity performance are used to evaluate the BSIM3V3 modeling accuracy. Benchmark circuit example of a VCO is given to demonstrate the technology capabilities which can be used as a reference circuit for customer training, technical support or customer design references
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; BiCMOS; RFCMOS; SiGe; benchmark circuit; circuit enablement; reference circuit; BiCMOS integrated circuits; Circuit simulation; Circuit synthesis; Circuit testing; Costs; FETs; Germanium silicon alloys; Hardware; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306108
