Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

Author

Ezaki, T. ; Warabino, T. ; Miyake, M. ; Sadachika, N. ; Navarro, D. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Ohguro, T. ; Iizuka, T. ; Taguchi, M. ; Kumashiro, S. ; Miyamoto, S.

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1264

Lastpage

1267

Abstract

We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surface-potential based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model) for circuit simulations

Keywords

MOSFET; semiconductor device noise; RF applications; advanced MOSFET; carrier distributions; circuit simulations; noise modeling; nonuniform mobility; self-consistent surface-potential description; Circuit noise; Circuit simulation; Low-frequency noise; MOSFETs; Noise figure; Noise generators; Radio frequency; Semiconductor device noise; Solid modeling; Surface fitting;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306109

Filename

4098378