• DocumentCode
    3469114
  • Title

    An improved charge pump with high efficiency for low voltage operations

  • Author

    Yan, Na ; Min, Hao

  • Author_Institution
    ASIC & Syst. State-Key Lab., Fudan Univ., Shanghai
  • Volume
    2
  • fYear
    2005
  • fDate
    24-0 Oct. 2005
  • Firstpage
    578
  • Lastpage
    581
  • Abstract
    This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. With the switching substrate technique and boosted transistor, the influence of body effect is almost eliminated and the voltage gain at each pumping node is greatly increased. So higher output voltage and higher efficiency than the conventional charge pump can be obtained by the proposed charge pump. Simulation results of different supply voltages and stage numbers at 2MHz input clock frequency are shown in this paper
  • Keywords
    low-power electronics; power supply circuits; 2 MHz; CMOS technologies; body effect; boosted transistor; charge pump circuit; switching substrate; voltage gain; CMOS technology; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Diodes; Low voltage; MOSFETs; Switches; Charge pump; boosted transistor; low voltage; number of stage; power efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2005. ASICON 2005. 6th International Conference On
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-9210-8
  • Type

    conf

  • DOI
    10.1109/ICASIC.2005.1611396
  • Filename
    1611396