Title :
An improved charge pump with high efficiency for low voltage operations
Author :
Yan, Na ; Min, Hao
Author_Institution :
ASIC & Syst. State-Key Lab., Fudan Univ., Shanghai
Abstract :
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. With the switching substrate technique and boosted transistor, the influence of body effect is almost eliminated and the voltage gain at each pumping node is greatly increased. So higher output voltage and higher efficiency than the conventional charge pump can be obtained by the proposed charge pump. Simulation results of different supply voltages and stage numbers at 2MHz input clock frequency are shown in this paper
Keywords :
low-power electronics; power supply circuits; 2 MHz; CMOS technologies; body effect; boosted transistor; charge pump circuit; switching substrate; voltage gain; CMOS technology; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Diodes; Low voltage; MOSFETs; Switches; Charge pump; boosted transistor; low voltage; number of stage; power efficiency;
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location :
Shanghai
Print_ISBN :
0-7803-9210-8
DOI :
10.1109/ICASIC.2005.1611396