DocumentCode
3469114
Title
An improved charge pump with high efficiency for low voltage operations
Author
Yan, Na ; Min, Hao
Author_Institution
ASIC & Syst. State-Key Lab., Fudan Univ., Shanghai
Volume
2
fYear
2005
fDate
24-0 Oct. 2005
Firstpage
578
Lastpage
581
Abstract
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. With the switching substrate technique and boosted transistor, the influence of body effect is almost eliminated and the voltage gain at each pumping node is greatly increased. So higher output voltage and higher efficiency than the conventional charge pump can be obtained by the proposed charge pump. Simulation results of different supply voltages and stage numbers at 2MHz input clock frequency are shown in this paper
Keywords
low-power electronics; power supply circuits; 2 MHz; CMOS technologies; body effect; boosted transistor; charge pump circuit; switching substrate; voltage gain; CMOS technology; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Diodes; Low voltage; MOSFETs; Switches; Charge pump; boosted transistor; low voltage; number of stage; power efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location
Shanghai
Print_ISBN
0-7803-9210-8
Type
conf
DOI
10.1109/ICASIC.2005.1611396
Filename
1611396
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