A study on relative sensitivity of sector split-drain magnetic field-effect transistor based on standard CMOS technology

In this paper, two different methods are used to model the relative sensitivity of sector split-drain magnetic field-effect transistor (MAGFET) based on standard CMOS technology. Numerical simulation is presented to depict the complicated distribution of electric potential and current in the inversion layer. Conformal mapping technique is applied to calculate the geometrical correction factor of sector Hall plate, through which the relative sensitivity of sector split-drain magnetic field-effect transistor can be expressed as an analytical model depending on geometric features of the sector structure. The model developed through numerical simulation and conformal mapping technique is verified by experimental results. The research indicates that the theoretical relative sensitivity of the sector split-drain MAGFET is 3.82%/T (3.77%/T is measured in the experiment), which is higher than the rectangular MAGFET that has been reported