DocumentCode
3469143
Title
A fully integrated 0.18-μm CMOS low noise amplifier for 2.4-GHz applications
Author
Shen, Yu ; Yang, Huazhong ; Luo, Rong
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Volume
2
fYear
2005
fDate
24-27 Oct. 2005
Firstpage
582
Lastpage
586
Abstract
A low noise amplifier (LNA) with good linearity and low noise figure has been designed by 0.18μm CMOS technology for 2.4GHz applications. The amplifier provides IIP3 of 11.8dBm and input -1dB compression point (CP) of -13.5dBm with a noise figure equal to 2.77dB, and has a forward gain of 4.5dB and power dissipation of 18mW using 1.8V supply.
Keywords
CMOS analogue integrated circuits; UHF amplifiers; integrated circuit design; integrated circuit noise; low noise amplifiers; 0.18 micron; 1.8 V; 18 mW; 2.4 GHz; 2.77 dB; 4.5 dB; CMOS LNA; low noise amplifier; noise figure; Circuits; Impedance matching; Inductors; Linearity; Low-noise amplifiers; Network-on-a-chip; Noise figure; Power dissipation; Q factor; Radio frequency; CMOS LNA; fully integrated circuit; input and output match;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2005. ASICON 2005. 6th International Conference On
Print_ISBN
0-7803-9210-8
Type
conf
DOI
10.1109/ICASIC.2005.1611397
Filename
1611397
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