DocumentCode :
3469153
Title :
A Compact Quantum-Mechanical Model for Double-Gate MOSFET
Author :
Lin, Chung-Hsun ; Dunga, Mohan V. ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
1272
Lastpage :
1274
Abstract :
A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2D simulation results well. This indicates that both Vth shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as Nbody, Tsi, Tox, etc
Keywords :
MOSFET; quantum theory; surface potential; compact quantum-mechanical model; double-gate MOSFET; gate capacitance degradation; strong inversion region; surface potential calculation; Capacitance; Carrier confinement; Degradation; Dielectric substrates; Doping; MOSFET circuits; Poisson equations; Predictive models; Quantization; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306111
Filename :
4098380
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3469153
بازگشت