DocumentCode
3469218
Title
Temperature Characteristics for Threshold Voltage of HV LDMOS
Author
Gao, Shan ; Chen, Junning ; Ke, Daoming ; Liu, Qi
Author_Institution
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1284
Lastpage
1286
Abstract
The temperature characteristics (at -27degC-300degC) on high voltage power LDMOS are discussed, and a calculation formula of threshold voltage´s temperature coefficient is given in this paper. Computing results show that the threshold voltage temperature coefficient of a high voltage power LDMOS is a constant in a wide range of temperature, a linear expression can be used to describe its temperature characteristics, and the threshold voltage temperature coefficient can be decreased by thin gate oxide film and high channel doping concentration
Keywords
power MOSFET; semiconductor doping; high channel doping concentration; high voltage power LDMOS; linear expression; temperature characteristics; temperature coefficient; thin gate oxide film; threshold voltage; Differential equations; Doping; Heating; MOS devices; MOSFETs; Medical simulation; Photonic band gap; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306115
Filename
4098384
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