Title :
An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain
Author :
Xu, Bojuan ; Xia, Zhiliang ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
A two-dimensional (2D) analytical model of double-gate (DG) MOSFETs with Schottky source/drain(S/D) is developed based on solving Poisson equation. We calculated the 2D potential distribution in the channel. An expression for threshold voltage for short-channel DG MOSFETs with Schottky S/D is also presented by defining the turning on condition. The results of the model are verified by numerical simulator, DESSIS 8.0
Keywords :
MOSFET; Poisson equation; Schottky diodes; semiconductor device models; 2D analytical model; DESSIS 8.0; Poisson equation; Schottky source/drain; analytical potential model; double-gate MOSFET; Analytical models; Doping; MOSFETs; Numerical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; Turning;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306140
