DocumentCode
3469286
Title
An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain
Author
Xu, Bojuan ; Xia, Zhiliang ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1296
Lastpage
1298
Abstract
A two-dimensional (2D) analytical model of double-gate (DG) MOSFETs with Schottky source/drain(S/D) is developed based on solving Poisson equation. We calculated the 2D potential distribution in the channel. An expression for threshold voltage for short-channel DG MOSFETs with Schottky S/D is also presented by defining the turning on condition. The results of the model are verified by numerical simulator, DESSIS 8.0
Keywords
MOSFET; Poisson equation; Schottky diodes; semiconductor device models; 2D analytical model; DESSIS 8.0; Poisson equation; Schottky source/drain; analytical potential model; double-gate MOSFET; Analytical models; Doping; MOSFETs; Numerical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306140
Filename
4098388
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