DocumentCode
3469313
Title
Model-Adaptable MOSFET Parameter Extraction With A Hybrid Genetic Algorithm
Author
Wu, Tao ; Li, Dingyu ; Liu, Xiaoyan ; Du, Gang ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1299
Lastpage
1302
Abstract
In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn´t complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result
Keywords
MOSFET; genetic algorithms; semiconductor device models; BSIMPD; MOSFET; hybrid genetic algorithm; parameter extraction; Algorithm design and analysis; Analytical models; Data mining; Genetic algorithms; Genetic mutations; Hybrid power systems; MOSFET circuits; Microelectronics; Optimization methods; Parameter extraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306141
Filename
4098389
Link To Document