Title :
TCAD Analysis for VLSI-Application-Oriented Process Optimization
Author :
Sponton, Luca ; Carbognani, Flavio ; Pramanik, Dipu ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., ETH Zurich
Abstract :
A new process optimization procedure is hereby presented, based on the quantitative impact of the variations of process variables on VLSI design performance. Process tuning is obtained through reverse modeling on transistor characteristics, process variations are then addressed by means of consistent TCAD simulations. Optimum process variables for minimum dynamic and static dissipation have been investigated in a low-power prototype chip, integrated in a 0.25 mum technology
Keywords :
VLSI; low-power electronics; technology CAD (electronics); 0.25 micron; TCAD analysis; VLSI application; dynamic dissipation; low power prototype chip; process optimization; static dissipation; Calibration; Circuit optimization; Circuit simulation; Design optimization; MOS devices; MOSFETs; Optimization methods; Performance analysis; Production; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306143
